TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 9.20 A |
Case/Package | TO-220 |
Power Rating | 70 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.27 Ω |
Polarity | N-Channel |
Power Dissipation | 60 W |
Threshold Voltage | 4 V |
Input Capacitance | 360pF @25V |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 9.20 A |
Rise Time | 30 ns |
Fall Time | 20 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 10.51 mm |
Size-Height | 15.49 mm |
Operating Temperature | -55℃ ~ 175℃ |
The IRF520PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout the industry.
● Dynamic dv/dt rating
● Repetitive avalanche rated
● Fast switching
● Ease of paralleling
● Simple drive requirements
● ±20V Gate to source voltage
● 2.5°C/W Thermal resistance, junction to case
● 62°C/W Thermal resistance, junction to ambient
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8 Pages / 0.12 MByte
Vishay Semiconductor
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Vishay Semiconductor
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