| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 200 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | P-CH |
| Power Dissipation | 200 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2700 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 40A |
| Rise Time | 86 ns |
| Input Capacitance (Ciss) | 2700pF @25V(Vds) |
| Input Power (Max) | 200 W |
| Fall Time | 81 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area.
● Advanced Process Technology
● New Ultra Low On-Resistance
● Fast Switching
● Dynamic dv/dt Rating
● Fully Avalanche Rated
Infineon
9 Pages / 0.18 MByte
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37 Pages / 2.01 MByte
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International Rectifier
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Semelab
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International Rectifier
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International Rectifier
INTERNATIONAL RECTIFIER IRF5210STRLPBF MOSFET Transistor, P Channel, 40A, 100V, 60mohm, -10V, 4V
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