| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 3.8 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | P-CH |
| Power Dissipation | 200 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 38A |
| Rise Time | 63 ns |
| Input Capacitance (Ciss) | 2780pF @25V(Vds) |
| Fall Time | 55 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.5 mm |
| Size-Width | 6.22 mm |
| Size-Height | 4.69 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF5210SPBF is a -100V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. It features combine to make this design an extremely efficient and reliable device for wide variety of other applications.
● Advanced process technology
● Ultra low on-resistance
● Repetitive avalanche allowed up to Tjmax
● 150°C Operating temperature
Infineon
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