| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | -100 V |
| Current Rating | -40.0 A |
| Case/Package | TO-263-3 |
| Polarity | P-CH |
| Power Dissipation | 3.8W (Ta), 200W (Tc) |
| Part Family | IRF5210S |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 40.0 A |
| Rise Time | 86.0 ns |
| Input Capacitance (Ciss) | 2700pF @25V(Vds) |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
P-Channel 100V 40A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
Infineon
11 Pages / 0.18 MByte
Infineon
10 Pages / 0.18 MByte
International Rectifier
Trans MOSFET P-CH 100V 40A 3Pin(3+Tab) TO-220AB
Semelab
40A, 100V, 0.07ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3
TT Electronics Resistors
Power Field-Effect Transistor, 40A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
New Jersey Semiconductor
Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK
IRF
Power MOSFET(Vdss=-100V, Rds(on)=0.06Ω, Id=-40A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.06Ω; ID -40A; TO-220AB; PD 200W; VGS +/-20
International Rectifier
INTERNATIONAL RECTIFIER IRF5210STRLPBF MOSFET Transistor, P Channel, 40A, 100V, 60mohm, -10V, 4V
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