| TYPE | DESCRIPTION |
|---|
| Case/Package | CASE 221A-09 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
TMOS E−FET.™ Power Field Effect Transistor
●N−Channel Enhancement−Mode Silicon Gate
●This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.
●• Avalanche Energy Specified
●• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
●• Diode is Characterized for Use in Bridge Circuits
●• IDSS and VDS(on) Specified at Elevated Temperature
ON Semiconductor
11 Pages / 0.59 MByte
ON Semiconductor
9 Pages / 0.36 MByte
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