| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -55.0 V |
| Current Rating | -31.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 60.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 110 W |
| Part Family | IRF5305 |
| Drain to Source Voltage (Vds) | 55.0 V |
| Breakdown Voltage (Drain to Source) | -55.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 31.0 A |
| Rise Time | 66 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Fall Time | 63 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 175℃ |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● P-Channel MOSFET
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