| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-262-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 60 mΩ |
| Polarity | P-CH |
| Power Dissipation | 3.8 W |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 31A |
| Rise Time | 66 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Fall Time | 63 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
P-Channel 55V 31A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262
Infineon
11 Pages / 0.68 MByte
Infineon
13 Pages / 0.27 MByte
International Rectifier
P-Channel MOSFET, Vdss = -55V, Rds = 0.06Ω, Id = -31A, TO-220
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.06Ω, Id=-31A)
New Jersey Semiconductor
Trans MOSFET P-CH 55V 31A 3Pin(3+Tab) TO-220ABO
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ω; ID -31A; TO-220AB; PD 110W; VGS +/-20V
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