| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -55.0 V |
| Current Rating | -31.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | P-Channel |
| Power Dissipation | 110 W |
| Part Family | IRF5305 |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | -55.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | -31.0 A |
| Rise Time | 66 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 63 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.54 mm |
| Size-Height | 15.24 mm |
| Operating Temperature | -55℃ ~ 175℃ |
International Rectifier
9 Pages / 0.17 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
37 Pages / 2.01 MByte
International Rectifier
5 Pages / 0.04 MByte
International Rectifier
P-Channel MOSFET, Vdss = -55V, Rds = 0.06Ω, Id = -31A, TO-220
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.06Ω, Id=-31A)
New Jersey Semiconductor
Trans MOSFET P-CH 55V 31A 3Pin(3+Tab) TO-220ABO
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ω; ID -31A; TO-220AB; PD 110W; VGS +/-20V
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