| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -55.0 V |
| Current Rating | -31.0 A |
| Case/Package | TO-263-3 |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | P-Channel |
| Power Dissipation | 3.8 W |
| Part Family | IRF5305S |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | -31.0 A, 310 mA |
| Rise Time | 66.0 ns |
| Input Capacitance (Ciss) | 1200pF @25V(Vds) |
| Input Power (Max) | 3.8 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●HEXFET® P-Channel Power MOSFETs, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
11 Pages / 0.68 MByte
International Rectifier
P-Channel MOSFET, Vdss = -55V, Rds = 0.06Ω, Id = -31A, TO-220
IRF
Power MOSFET(Vdss=-55V, Rds(on)=0.06Ω, Id=-31A)
New Jersey Semiconductor
Trans MOSFET P-CH 55V 31A 3Pin(3+Tab) TO-220ABO
International Rectifier
MOSFET, Power; P-Ch; VDSS -55V; RDS(ON) 0.06Ω; ID -31A; TO-220AB; PD 110W; VGS +/-20V
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