| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 110 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 55 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | -12.0 V |
| Breakdown Voltage (Gate to Source) | ±0.00 V |
| Continuous Drain Current (Ids) | 14.0 A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 790pF @25V(Vds) |
| Input Power (Max) | 55 W |
| Fall Time | 36 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 55W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Rail |
| Size-Length | 10.1 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF530A is a 100V N-channel Advanced Power MOSFET featured with avalanche rugged technology and rugged gate oxide technology. It has lower input capacitance and improved gate charge.
● Extended safe operating area
● Lower leakage current (10A maximum at VDS = 100V)
● Lower RDS (ON) (0.092R typical)
● ±20V Gate to source voltage
● 62.5°C/W Thermal resistance, junction to ambient
● 2.74°C/W Thermal resistance, junction to case
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