| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 92 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0265 Ω |
| Polarity | N-CH |
| Power Dissipation | 92 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1770pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 36A |
| Rise Time | 51 ns |
| Thermal Resistance | 1.64℃/W (RθJC) |
| Maximum Forward Voltage (Max) | 1.3 V |
| Input Capacitance (Ciss) | 1770pF @25V(Vds) |
| Input Power (Max) | 92 W |
| Fall Time | 39 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 92W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.54 mm |
| Size-Width | 4.69 mm |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF540ZPBF is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
● Advanced process technology
● Ultra low on-resistance
● Repetitive avalanche allowed up to Tjmax
● 175°C Operating temperature
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