| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 10 Pin |
| Case/Package | Direct-FET |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0022 Ω |
| Polarity | N-CH |
| Power Dissipation | 96 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 130A |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 6530pF @25V(Vds) |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 96W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dv/dt and di/dt capability
● Lead-free, RoHS compliant
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