| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 3.30 A |
| Case/Package | TO-220-3 |
| Power Rating | 36 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.5 Ω |
| Polarity | N-Channel |
| Power Dissipation | 36 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 140pF @25V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 3.30 A |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 140pF @25V(Vds) |
| Fall Time | 8.9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 36 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRF610PBF is a 200V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Fast switching
● Easy to parallel
● Simple drive requirement
Vishay Semiconductor
8 Pages / 0.62 MByte
Vishay Semiconductor
9 Pages / 0.26 MByte
Vishay Semiconductor
3 Pages / 0.14 MByte
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
VISHAY
MOSFET N-CH 200V 3.3A TO-220AB
Intersil
Trans MOSFET N-CH 200V 3.3A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 200V 3.3A TO-220AB
Harris
MOSFET N-CH 200V 3.3A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 3.3A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH Si 200V 2.5A 3Pin(3+Tab) TO-220AB
Motorola
2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Samsung
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Microsemi
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
