TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0019 Ω |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 1.1 V |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20 V |
Continuous Drain Current (Ids) | 27A |
Rise Time | 100 ns |
Input Capacitance (Ciss) | 8555pF @16V(Vds) |
Fall Time | 265 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF6201PBF is a HEXFET® single N-channel Power MOSFET for use with battery protection, high side and low side switch.
● Low RDS (ON) (
● Industry standard package for multi-vendor compatibility
● Halogen-free
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