IRF620B Datasheet PDF - Fairchild

General Description

●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,

●switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

●Features

●• 5.0A, 200V, RDS(on)= 0.8Ω@VGS= 10 V

●• Low gate charge ( typical 12 nC)

●• Low Crss ( typical 10 pF)

●• Fast switching

●• 100% avalanche tested

●• Improved dv/dt capability