TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 250 V |
Current Rating | 5.20 A |
Case/Package | TO-220-3 |
Power Rating | 50 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 800 mΩ |
Polarity | N-Channel |
Power Dissipation | 50 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Continuous Drain Current (Ids) | 5.20 A |
Rise Time | 22 ns |
Input Capacitance (Ciss) | 260pF @25V(Vds) |
Input Power (Max) | 50 W |
Fall Time | 13 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 50 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.41 mm |
Size-Width | 4.7 mm |
Size-Height | 9.01 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 50 |
The IRF620PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Ease of paralleling
● Simple drive requirements
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