| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 250 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.15 Ω |
| Polarity | P-Channel |
| Power Dissipation | 250 W |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Rise Time | 70 ns |
| Input Capacitance (Ciss) | 2210pF @25V(Vds) |
| Input Power (Max) | 250 W |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 250W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10 mm |
| Size-Width | 4.4 mm |
| Size-Height | 15.65 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRF6218PBF is a -150V single P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Low gate to drain charge to reduce switching loss
● Fully characterized capacitance and avalanche SOA
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