| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Polarity | N-CH |
| Power Dissipation | 30 W |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 9A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 700pF @25V(Vds) |
| Input Power (Max) | 30 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 30W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
Description
●This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
●General features
●■ Extremely high dv/dt capability
●■ Very low intrinsic capacitances
●■ Gate charge minimized
●Applications
●■ Switching application
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