TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 200 V |
Current Rating | 9.30 A |
Case/Package | TO-220-3 |
Drain to Source Resistance (on) (Rds) | 0.3 Ω |
Polarity | N-Channel |
Power Dissipation | 82 W |
Part Family | IRF630N |
Input Capacitance | 575pF @25V |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Continuous Drain Current (Ids) | 9.30 A |
Rise Time | 14 ns |
Thermal Resistance | 1.83℃/W (RθJC) |
Input Capacitance (Ciss) | 575pF @25V(Vds) |
Input Power (Max) | 82 W |
Fall Time | 15 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 82000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Height | 9.02 mm |
Operating Temperature | -55℃ ~ 175℃ |
●N-Channel Power MOSFET 8A to 12A, Infineon
●The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
8 Pages / 0.62 MByte
International Rectifier
20 Pages / 2.6 MByte
International Rectifier
3 Pages / 0.04 MByte
ST Microelectronics
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET
VISHAY
Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH 200V 9A 3Pin TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB
Intersil
9A, 200V, 0.4Ω, N-Channel Power MOSFETs
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Harris
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Vishay Siliconix
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Advanced Power Electronics
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.