TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220 |
Power Rating | 75 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.4 Ω |
Polarity | N-Channel |
Power Dissipation | 74 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 200 V |
Continuous Drain Current (Ids) | 9.00 A |
Rise Time | 28 ns |
Fall Time | 20 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 74000 mW |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Size-Length | 10.41 mm |
Size-Width | 4.7 mm |
Size-Height | 9.01 mm |
Operating Temperature | -55℃ ~ 150℃ |
The IRF630PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Ease of paralleling
● Simple drive requirements
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