| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Drain to Source Resistance (on) (Rds) | 400 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 3 W |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 9.00 A |
| Rise Time | 28 ns |
| Input Capacitance (Ciss) | 800pF @25V(Vds) |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3W (Ta), 74W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Minimum Packing Quantity | 2000 |
Single N-Channel 200 V 0.4 Ohms Surface Mount Power Mosfet - TO-263
VISHAY
6 Pages / 0.56 MByte
VISHAY
10 Pages / 0.19 MByte
ST Microelectronics
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET
VISHAY
Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB
Fairchild
Trans MOSFET N-CH 200V 9A 3Pin TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 9A 3Pin(3+Tab) TO-220AB
Intersil
9A, 200V, 0.4Ω, N-Channel Power MOSFETs
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Harris
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Vishay Siliconix
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Advanced Power Electronics
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
