IRF634 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-220-3
Description:	N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET
Documentation:	IRF634 Datasheet (14 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IRF634 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Voltage Rating (DC)	250 V
Current Rating	8.00 A
Case/Package	TO-220-3
Drain to Source Resistance (on) (Rds)	450 mΩ
Polarity	N-Channel
Power Dissipation	80W (Tc)
Drain to Source Voltage (Vds)	250 V
Breakdown Voltage (Drain to Source)	250 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	8.00 A
Input Capacitance (Ciss)	770pF @25V(Vds)
Power Dissipation (Max)	80W (Tc)