| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 250 V |
| Current Rating | 8.10 A |
| Case/Package | TO-252-3 |
| Polarity | N-Channel |
| Power Dissipation | 74.0 W |
| Drain to Source Voltage (Vds) | 250 V |
| Breakdown Voltage (Drain to Source) | 250 V |
| Continuous Drain Current (Ids) | 8.10 A |
| Rise Time | 21.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
International Rectifier
9 Pages / 0 MByte
International Rectifier
8 Pages / 1.47 MByte
ST Microelectronics
N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET
VISHAY
MOSFET N-CH 250V 8.1A TO-220AB
Vishay Siliconix
MOSFET N-CH 250V 8.1A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 250V 8.1A 3Pin(3+Tab) TO-220AB
Infineon
Infineon Technologies IRF634, MOSFET N channel 8.1A 250V
Microsemi
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
Harris
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
