IRF640 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	MOSFETs
Case Package:	TO-220-3
Description:	Trans MOSFET N-CH 200V 18A 3Pin(3+Tab) TO-220 Tube
Documentation:	IRF640 Datasheet (14 Pages)Package Outline Dimension on10 Page 11 Page 12 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IRF640 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Voltage Rating (DC)	200 V
Current Rating	18.0 A
Case/Package	TO-220-3
Drain to Source Resistance (on) (Rds)	180 mΩ
Polarity	N-Channel
Power Dissipation	125W (Tc)
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	18.0 A
Rise Time	27 ns
Input Capacitance (Ciss)	1560pF @25V(Vds)
Input Power (Max)	125 W
Fall Time	25 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	125W (Tc)