TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 200 V |
Current Rating | 18.0 A |
Case/Package | TO-263-3 |
Drain to Source Resistance (on) (Rds) | 0.15 Ω |
Polarity | N-Channel |
Power Dissipation | 150 W |
Part Family | IRF640NS |
Input Capacitance | 1160pF @25V |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Continuous Drain Current (Ids) | 18.0 A |
Rise Time | 19.0 ns |
Thermal Resistance | 1℃/W (RθJC) |
Input Capacitance (Ciss) | 1160pF @25V(Vds) |
Input Power (Max) | 150 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 10.67 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 175℃ |
●HEXFET® N-Channel Power MOSFET up to 50A, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
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