| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 250 V |
| Current Rating | 14.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 125 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.28 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1300pF @25V |
| Drain to Source Voltage (Vds) | 250 V |
| Breakdown Voltage (Drain to Source) | 250 V |
| Continuous Drain Current (Ids) | 14.0 A |
| Rise Time | 24 ns |
| Input Capacitance (Ciss) | 1300pF @25V(Vds) |
| Fall Time | 49 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRF644PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Ease of paralleling
● Simple drive requirements
Vishay Semiconductor
8 Pages / 0.28 MByte
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Vishay Semiconductor
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