TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.28 Ω |
Polarity | N-Channel |
Power Dissipation | 3.1 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 250 V |
Continuous Drain Current (Ids) | 14.0 A |
Input Capacitance (Ciss) | 1300pF @25V(Vds) |
Input Power (Max) | 3.1 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.1 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 9.65 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 2000 |
The IRF644SPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Ease of paralleling
● Simple drive requirements
● Halogen-free
● Surface-mount
VISHAY
8 Pages / 0.17 MByte
VISHAY
9 Pages / 0.16 MByte
VISHAY
3 Pages / 0.06 MByte
International Rectifier
MOSFET N-CH 250V 14A TO-220AB
Vishay Siliconix
MOSFET N-CH 250V 14A TO-220AB
Harris
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 250V 14A 3Pin(3+Tab) TO-220AB
Intersil
STANDARD POWER MOSFETs N-CHANNEL TO-220AB PACKAGE
Samsung
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.