Description
●The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
●• Lead and Bromide Free ①
●• Low Profile (<0.7 mm)
●• Dual Sided Cooling Compatible ①
●• Ultra Low Package Inductance
●• Optimized for High Frequency Switching ①
●• Ideal for High Performance Isolated Converter Primary Switch Socket
●• Optimized for Synchronous Rectification
●• Low Conduction Losses
●• Compatible with existing Surface Mount Techniques ①
