Description
●The IRF6646 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
● RoHS compliant containing no lead or bromide c
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible c
● Ultra Low Package Inductance
● Optimized for High Frequency Switching c
● Ideal for High Performance Isolated Converter Primary Switch Socket
● Optimized for Synchronous Rectification
● Low Conduction Losses
● Compatible with existing Surface Mount Techniques c
