TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | DirectFET-MN |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 7 mΩ |
Polarity | N-CH |
Power Dissipation | 89 W |
Threshold Voltage | 4.9 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | 86A |
Rise Time | 29 ns |
Input Capacitance (Ciss) | 2120pF @25V(Vds) |
Input Power (Max) | 2.8 W |
Fall Time | 13 ns |
Operating Temperature (Max) | 150 ℃ |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Size-Length | 6.35 mm |
Size-Width | 5.05 mm |
Size-Height | 0.7 mm |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
N-Channel 60V 86A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MN
Infineon
10 Pages / 0.62 MByte
Infineon
11 Pages / 0.62 MByte
Infineon
1 Pages / 0.15 MByte
International Rectifier
Trans MOSFET N-CH Si 60V 86A 7Pin Direct-FET MN T/R
International Rectifier
Trans MOSFET N-CH Si 60V 86A 7Pin Direct-FET MN T/R
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