| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | Direct-FET |
| Drain to Source Resistance (on) (Rds) | 53.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.2W (Ta), 42W (Tc) |
| Part Family | IRF6665 |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 3.40 A |
| Rise Time | 2.8 ns |
| Input Capacitance (Ciss) | 530pF @25V(Vds) |
| Fall Time | 4.3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
N-Channel 100V 4.2A (Ta), 19A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SH
Infineon
10 Pages / 0.59 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
10 Pages / 0.59 MByte
Infineon
Direct-FET N-CH 100V 4.2A
International Rectifier
Trans MOSFET N-CH Si 100V 4.2A 6Pin Direct-FET SH
Infineon
Direct-FET N-CH 100V 4.2A
International Rectifier
Trans MOSFET N-CH 100V 4.2A 6Pin Direct-FET SH T/R
International Rectifier
Trans MOSFET N-CH Si 100V 4.2A 6Pin Direct-FET SH T/R
Infineon
Direct-FET N-CH 100V 4.2A
Infineon
Direct-FET N-CH 100V 4.2A
International Rectifier
Trans MOSFET N-CH Si 100V 4.2A 6Pin Direct-FET SH T/R
Infineon
Direct-FET N-CH 100V 4.2A
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