| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 3.50 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 0.15 Ω |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 2 W |
| Part Family | IRF7101 |
| Threshold Voltage | 3 V |
| Input Capacitance | 320pF @15V |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Continuous Drain Current (Ids) | 3.50 A |
| Rise Time | 10.0 ns |
| Thermal Resistance | 62.5℃/W (RθJA) |
| Input Capacitance (Ciss) | 320pF @15V(Vds) |
| Input Power (Max) | 2 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
● Advanced Process Technology
● Ultra Low On-Resistance
● Dual N-Channel MOSFET
● Surface Mount
● Available in Tape and reel
● Dynamic dv/dt Rating
● Fast Switching
● Lead-Free
International Rectifier
1 Pages / 0.71 MByte
International Rectifier
9 Pages / 0.25 MByte
International Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.1Ω; ID 3.5A; SO-8; PD 2W; VGS +/-12V
International Rectifier
Trans MOSFET N-CH 20V 3.5A 8Pin SOIC Tube
International Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
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