TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.1 Ω |
Polarity | Dual N-Channel |
Power Dissipation | 2 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 20 V |
Continuous Drain Current (Ids) | 3.5A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 320pF @15V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 30 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7101PBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
● Advanced process technology
● Ultra low ON-resistance
● Surface-mount device
● Dynamic dV/dt rating
● Fast switching performance
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International Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.1Ω; ID 3.5A; SO-8; PD 2W; VGS +/-12V
International Rectifier
Trans MOSFET N-CH 20V 3.5A 8Pin SOIC Tube
International Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
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