| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.13 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 290pF @25V |
| Drain to Source Voltage (Vds) | 50 V |
| Breakdown Voltage (Drain to Source) | 50 V |
| Continuous Drain Current (Ids) | 3A |
| Rise Time | 8 ns |
| Thermal Resistance | 62.5℃/W (RθJA) |
| Input Capacitance (Ciss) | 290pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7103PBF is a dual N-channel MOSFET designed for vapour phase, infrared or wave soldering techniques. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
● Advanced process technology
● Ultra low ON-resistance
● Surface-mount device
● Dynamic dV/dt rating
● Fast switching performance
Infineon
9 Pages / 0.29 MByte
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270 Pages / 11.59 MByte
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30 Pages / 0.64 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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8 Pages / 0.11 MByte
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