| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 7.30 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 0.05 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Part Family | IRF7201 |
| Threshold Voltage | 1 V |
| Input Capacitance | 550pF @25V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 7.30 A |
| Rise Time | 35.0 ns |
| Input Capacitance (Ciss) | 550pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Description
●Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●• Generation V Technology
●• Ultra Low On-Resistance
●• N-Channel MOSFET
●• Surface Mount
●• Available in Tape & Reel
●• Dynamic dv/dt Rating
●• Fast Switching
●• Lead-Free
International Rectifier
7 Pages / 0.16 MByte
International Rectifier
MOSFET N-CH 30V 7.3A 8-SOIC
Motorola
3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
International Rectifier
Trans MOSFET N-CH 30V 7.3A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.03Ω; ID 7.3A; SO-8; PD 2.5W; VGS +/-20V; -55d
International Rectifier
MOSFET N-CH 30V 7.3A 8-SOIC
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