| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -5.30 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Part Family | IRF7204 |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | -20.0 V |
| Continuous Drain Current (Ids) | -5.30 A |
| Rise Time | 26 ns |
| Thermal Resistance | 50℃/W (RθJC) |
| Input Capacitance (Ciss) | 860pF @10V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 68 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●P-Channel Power MOSFETs up to 7A, Infineon
●Infineon"s range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
International Rectifier
9 Pages / 0.23 MByte
International Rectifier
MOSFET P-CH 20V 5.3A 8-SOIC
IRF
Power MOSFET(Vdss=-20V, Rds(on)=0.06Ω, Id=-5.3A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.06Ω; ID -5.3A; SO-8; PD 2.5W; VGS +/-12V
International Rectifier
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.06Ω; ID -5.3A; SO-8; PD 2.5W; VGS +/-12V
International Rectifier
MOSFET P-CH 20V 5.3A 8-SOIC
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