| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -5.30 A |
| Case/Package | SOIC |
| Part Family | IRF7204 |
| Drain to Source Voltage (Vds) | 20.0 V |
| Continuous Drain Current (Ids) | 5.30 A |
| Rise Time | 26.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | End of Life |
| Packaging | Tape & Reel (TR) |
Description
●Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
●• Adavanced Process Technology
●• Ultra Low On-Resistance
●• P-Channel MOSFET
●• Surface Mount
●• Available in Tape & Reel
●• Dynamic dv/dt Rating
●• Fast Switching
International Rectifier
9 Pages / 0.14 MByte
International Rectifier
MOSFET P-CH 20V 5.3A 8-SOIC
IRF
Power MOSFET(Vdss=-20V, Rds(on)=0.06Ω, Id=-5.3A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.06Ω; ID -5.3A; SO-8; PD 2.5W; VGS +/-12V
International Rectifier
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.06Ω; ID -5.3A; SO-8; PD 2.5W; VGS +/-12V
International Rectifier
MOSFET P-CH 20V 5.3A 8-SOIC
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