| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -5.30 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Part Family | IRF7204 |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | -5.30 A |
| Rise Time | 26.0 ns |
| Thermal Resistance | 50℃/W (RθJC) |
| Input Capacitance (Ciss) | 860pF @10V(Vds) |
| Input Power (Max) | 2.5 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●HEXFET® P-Channel Power MOSFETs, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
9 Pages / 0.23 MByte
International Rectifier
MOSFET P-CH 20V 5.3A 8-SOIC
IRF
Power MOSFET(Vdss=-20V, Rds(on)=0.06Ω, Id=-5.3A)
International Rectifier
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.06Ω; ID -5.3A; SO-8; PD 2.5W; VGS +/-12V
International Rectifier
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.06Ω; ID -5.3A; SO-8; PD 2.5W; VGS +/-12V
International Rectifier
MOSFET P-CH 20V 5.3A 8-SOIC
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