| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -4.60 A |
| Case/Package | SOIC |
| Power Dissipation | 2.5 W |
| Part Family | IRF7205 |
| Drain to Source Voltage (Vds) | 30.0 V |
| Continuous Drain Current (Ids) | 4.60 A |
| Rise Time | 21.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
Description
●Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
●• Adavanced Process Technology
●• Ultra Low On-Resistance
●• P-Channel MOSFET
●• Surface Mount
●• Available in Tape & Reel
●• Dynamic dv/dt Rating
●• Fast Switching
International Rectifier
9 Pages / 0.16 MByte
International Rectifier
Trans MOSFET P-CH 30V 4.6A 8Pin SOIC
International Rectifier
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ω; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier
Trans MOSFET P-CH 30V 4.6A 8Pin SOIC Tube
International Rectifier
Trans MOSFET P-CH 30V 4.6A 8Pin SOIC T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
