| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 50 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.8 Ω |
| Polarity | N-Channel |
| Power Dissipation | 50 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 400 V |
| Continuous Drain Current (Ids) | 3.30 A |
| Input Capacitance (Ciss) | 410pF @25V(Vds) |
| Input Power (Max) | 50 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 50 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 50 |
The IRF720PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Ease of paralleling
● Simple drive requirements
VISHAY
8 Pages / 0.27 MByte
VISHAY
10 Pages / 0.14 MByte
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