| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.015 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 40 V |
| Breakdown Voltage (Drain to Source) | 40 V |
| Continuous Drain Current (Ids) | 10.5A |
| Rise Time | 490 ns |
| Input Capacitance (Ciss) | 9250pF @25V(Vds) |
| Fall Time | 97 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7240TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering technique.
● Industry standard pin-out
Infineon
9 Pages / 0.11 MByte
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270 Pages / 11.59 MByte
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27 Pages / 0.3 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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3 Pages / 0.04 MByte
International Rectifier
-40V Single P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.015Ω; ID -10.5A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.015Ω; ID -10.5A; SO-8; PD 2.5W; VGS +/-20V
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