| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | SOIC |
| Polarity | N-Channel |
| Part Family | IRF7303Q |
| Drain to Source Voltage (Vds) | 30.0 V |
| Continuous Drain Current (Ids) | 4.90 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Description
●These HEXFET® Power MOSFET"s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET"s are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dual N Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● 150°C Operating Temperature
● Lead-Free
International Rectifier
9 Pages / 0.23 MByte
International Rectifier
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