| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | SOIC |
| Part Family | IRF7309Q |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Description
●Specifically designed for Automotive applications, these HEXFET® Power MOSFET"s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET"s are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dual N and P Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● 150°C Operating Temperature
● Automotive [Q101] Qualified
● Lead-Free
International Rectifier
11 Pages / 1.9 MByte
International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
Trans MOSFET N/P-CH 30V 4A/3A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N/P-CH 30V 4A/3A 8Pin SOIC Tube
International Rectifier
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
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