| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 6.60 A |
| Case/Package | SOIC-8 |
| Power Dissipation | 2 W |
| Part Family | IRF7311 |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 6.60 A |
| Rise Time | 17.0 ns |
| Input Capacitance (Ciss) | 900pF @15V(Vds) |
| Input Power (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | End of Life |
| Packaging | Tape & Reel (TR) |
Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
●• Generation V Technology
●• Ultra Low On-Resistance
●• Dual N-Channel MOSFET
●• Surface Mount
●• Fully Avalanche Rated
International Rectifier
7 Pages / 0.2 MByte
International Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.023Ω; ID 6.6A; SO-8; PD 2W; VGS +/-12V
International Rectifier
Trans MOSFET N-CH 20V 6.6A 8Pin SOIC Tube
International Rectifier
Trans MOSFET N-CH Si 20V 6.6A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 20V 6.6A 8Pin SOIC
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