| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Channels | 2 Channel |
| Drain to Source Resistance (on) (Rds) | 46 mΩ |
| Polarity | N-CH |
| Power Dissipation | 2 W |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 6.5A |
| Rise Time | 8.9 ns |
| Input Capacitance (Ciss) | 650pF @25V(Vds) |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.75 mm |
Infineon
7 Pages / 0.23 MByte
International Rectifier
N-Channel Dual MOSFET, Vdss = 30V, Rds = 0.029Ω, Id = 6.5A, SOIC-8
International Rectifier
MOSFET, Power; Dual N-Ch; VDSS 30V; RDS(ON) 0.029Ω; ID 6.5A; SO-8; PD 2W; VGS +/-20V
International Rectifier
Trans MOSFET N-CH 30V 6.5A 8Pin SOIC Tube
International Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
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