| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.058 Ω |
| Polarity | Dual P-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 4.9A |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 710pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 32 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7316PBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
● Generation V technology
● Ultra low ON-resistance
● Surface-mount device
● Fully avalanche rated
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International Rectifier
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
Trans MOSFET P-CH 30V 4.9A 8Pin SOIC T/R
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -30V; RDS(ON) 0.042Ω; ID -4.9A; SO-8; PD 2W; VGS +/-20
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