| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.029 Ω |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 6.5A/4.9A |
| Input Capacitance (Ciss) | 650pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7319PBF is a 30V dual N-channel and P-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Surface mount
● Fully avalanche rated
● Dynamic dV/dt rating
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