TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2 W |
Number of Channels | 2 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.018 Ω |
Polarity | Dual P-Channel |
Power Dissipation | 2 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20 V |
Continuous Drain Current (Ids) | 9A |
Rise Time | 36 ns |
Input Capacitance (Ciss) | 2940pF @15V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 190 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7324PBF is a -20V dual P-channel new trench HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
● Trench technology
● Ultra low on-resistance
● Dual P-channel MOSFET
● Low profile (<1.1mm)
● 2.5V Rated
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