| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.018 Ω |
| Polarity | Dual P-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Input Capacitance | 2940 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | -20.0 V |
| Continuous Drain Current (Ids) | 9A |
| Rise Time | 36 ns |
| Input Capacitance (Ciss) | 2940pF @15V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 190 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7324TRPBF is a HEXFET® dual P-channel MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
● Ruggedized design
● Trench technology
● Ultra low ON-resistance
● Low profile
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