| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -12.0 V |
| Current Rating | -9.20 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 30 mΩ |
| Polarity | Dual P-Channel |
| Power Dissipation | 2 W |
| Drain to Source Voltage (Vds) | 12 V |
| Continuous Drain Current (Ids) | 9.20 A |
| Input Capacitance (Ciss) | 3450pF @10V(Vds) |
| Input Power (Max) | 2 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 5 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●HEXFET® P-Channel Power MOSFETs, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
9 Pages / 0.31 MByte
International Rectifier
-12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
International Rectifier
MOSFET, Power; Dual P-Ch; VDSS -12V; RDS(ON) 17 Milliohms; ID -9.2A; SO-8; PD 2W; -55de
International Rectifier
MOSFET 2P-CH 12V 9.2A 8-SOIC
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